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 ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
* * * * Current Transfer Ratio at IF = 10 mA Isolation Test Voltage, 5300 VRMS Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Dual Channel
A1 C2 C3 A 4 8E 7C 6C 5E
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * BSI IEC60950 IEC60065 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * FIMKO
Quad Channel
A1 C C A A C
2 3 4 5 6 7 8 16 E 15 C 14 C 13 E 12 E 11 C 10 C 9E
Description
The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CTR modulation. The ILD1/ 2/ 5 has two isolated channels in a single DIP package and the ILQ1/ 2/ 5 has four isolated channels per package.
C A
i179012
e3
Pb
Pb-free
Order Information
Part ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 ILD1-X007 ILD1-X009 ILD2-X006 ILD2-X007 ILD2-X009 ILD5-X009 ILQ1-X009 ILQ2-X009 Remarks CTR > 20 %, DIP-8 CTR > 20 %, DIP-16 CTR > 100 %, DIP-8 CTR > 100 %, DIP-16 CTR > 50 %, DIP-8 CTR > 50 %, DIP-16 CTR > 20 %, SMD-8 (option 7) CTR > 20 %, SMD-8 (option 9) CTR > 100 %, DIP-8 400 mil (option 6) CTR > 100 %, SMD-8 (option 7) CTR > 100 %, SMD-8 (option 9) CTR > 50 %, SMD-8 (option 9) CTR > 20 %, SMD-16 (option 9) CTR > 100 %, SMD-16 (option 9)
For additional information on the available options refer to Option Information.
Document Number 83646 Rev. 1.4, 05-Nov-04
www.vishay.com 1
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation Derate linearly from 25 C Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 1.3 Unit V mA A mW mW/C
Output
Parameter Collector-emitter reverse voltage Test condition Part ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 Collector current t < 1.0 ms Power dissipation Derate linearly from 25 C Symbol VCER VCER VCER VCER VCER VCER IC IC Pdiss Value 50 50 70 70 70 70 50 400 200 2.6 Unit V V V V V V mA mA mW mW/C
Coupler
Parameter Isolation test voltage (between emitter and detector referred to standard climate 25 C/ 50 % RH, DIN 50014) Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Package power dissipation Derate linearly from 25 C Storage temperature Operating temperature Junction temperature Soldering temperature 2.0 mm from case bottom Tstg Tamb Tj Tsld RIO RIO Ptot Test condition Symbol VISO Value 5300 Unit VRMS
7.0 7.0 1012 10
11
mm mm mW mW/C C C C C
250 3.3 - 40 to + 150 - 40 to + 100 100 260
www.vishay.com 2
Document Number 83646 Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Capacitance Thermal resistance, junction to lead Test condition IF = 60 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO TthJL Min Typ. 1.25 0.01 25 750 Max 1.65 10 Unit V A pF K/W
Output
Parameter Collector-emitter capacitance Collector-emitter leakage current Saturation voltage, collectoremitter DC forward current gain DC forward current gain saturated Thermal resistance, junction to lead Test condition VCE = 5.0 V, f = 1.0 MHz VVCE = 10 V ICE = 1.0 mA, IB = 20 A VCE = 10 V, IB = 20 A VCE = 0.4 V, IB = 20 A Symbol CCE ICEO VCESAT HFE HFEsat Rthjl 200 120 Min Typ. 6.8 5.0 0.25 650 400 500 50 0.4 1800 600 K/W Max Unit pF nA V
Coupler
Parameter Capacitance (input-output) Test condition VIO = 0 V, f = 1.0 MHz Symbol CIO Min Typ. 0.8 Max Unit pF
Current Transfer Ratio
Parameter Current Transfer Ratio (collector-emitter saturated) Test condition IF = 10 mA, VCE = 0.4 V Part ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 Current Transfer Ratio (collector-emitter) IF = 10 mA, VCE = 10 V ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 Symbol CTRCEsat CTRCEsat CTRCEsat CTRCE CTRCE CTRCE 20 100 50 Min Typ. 75 170 100 80 200 130 300 500 400 Max Unit % % % % % %
Document Number 83646 Rev. 1.4, 05-Nov-04
www.vishay.com 3
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors Typical Switching Times Non-saturated Switching Timing
Parameter Test condition Symbol Unit ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 IF mA 20 5.0 10 tD s 0.8 1.7 1.7 Current Delay Rise time Storage Fall time Propagation H-L tPHL s 0.7 1.2 1.1 Propagation L-H tPLH s 1.4 2.3 2.5 VCE = 5.0 V, RL = 75 , 50 % of VPP tr s 1.9 2.6 2.6 tS s 0.2 0.4 0.4 tf s 1.4 2.2 2.2
Saturated Switching Timing
Parameter Test condition Symbol Unit ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 IF mA 20 5.0 10 tD s 0.8 1.0 1.7 Current Delay Rise time Storage Fall time Propagation H-L tPHL s 1.6 5.4 2.6 Propagation L-H tPLH s 8.6 7.4 7.2 VCE = 0.4 V, RL = 1.0 k, VCC = 5.0 V, VTH = 1.5 V tr s 1.2 2.0 7.0 tS s 7.4 5.4 4.6 tf s 7.6 13.5 20
Common Mode Transient Immunity
Parameter Common mode rejection, output high Common mode rejection, output low Common mode coupling capacitance Test condition VCM = 50 VP-P, RL = 1.0 k, IF = 0 mA VCM = 50 VP-P, RL = 1.0 k, IF = 10 mA Symbol CMH CML CCM Min Typ. 5000 5000 0.01 Max Unit V/s V/s pF
www.vishay.com 4
Document Number 83646 Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
IF
VCC=5 V IF=10 mA VO F=10 KHz, DF=50% R L=75
VO tD tR tPLH VTH=1.5 V
iild1_01
tPHL
iild1_04
tS
tF
Figure 1. Non-saturated Switching Schematic
Figure 4. Saturated Switching Timing
IF
V F - Forward Voltage - V
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 I F - Forward Current - mA 100 TA = 100C TA = 25C TA = -55C
t PHL VO tPLH
tS
50%
iild1_02
tD
tR
tF
iild1_05
Figure 2. Non-saturated Switching Timing
Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED Current
CTRNF - Normalized CTR Factor
1.5
F=10 KHz, DF=50% IF=10 mA
VCC=5 V RL VO
1.0
Normalized to: VCE = 10 V, IF = 10 mA TA= 25C CTRce(sat) VCE = 0.4 V NCTR
0.5 NCTR(SAT)
0.0 .1 1 10 100 I F - LED Current - mA
iild1_03
iild1_06
Figure 3. Saturated Switching Schematic
Figure 6. Normalized Non-Saturated and Saturated CTR vs. LED Current
Document Number 83646 Rev. 1.4, 05-Nov-04
www.vishay.com 5
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
CTRNF - Normalized CTR Factor
1.5
ICE - Collector Current - mA
Normalized to: VCE = 10 V, IF = 10 mA, TA= 25C CTRce(sat) VCE = 0.4 V 1.0 TA= 50C NCTR 0.5 NCTR(SAT) 0.0 .1 1 10 100 I F - LED Current - mA
35 30 25 20 15 10 5 0 0
iild1_10
50C 70C 85C
25C
10
20
30
40
50
60
iild1_07
IF - LED Current - mA
Figure 7. Normalized Non-Saturated and Saturated CTR vs. LED Current
Figure 10. Collector-Emitter Current vs. Temperature and LED Current
1.5
CTR - Normalized CTR Factor
10 5 Normalized to: VCE = 10 V, IF = 10 mA TA= 25C
ICEO - Collector-Emitter - nA
10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 Typical Vce = 10 V
1.0 CTRce(sat) VCE = 0.4 V TA= 70C NCTR 0.5 NCTR(SAT) 0.0 .1 1 10 100 I F - LED Current - mA
TA - Ambient Temperature - C
iild1_11
iild1_08
Figure 8. Normalized Non-Saturated and Saturated CTR vs. LED Current
Figure 11. Collector-Emitter Leakage Current vs.Temp.
1.5
NCTR - Normalized CTR
1000
tpLH - Propagation Low-High s
2.5
tpHL - Propagation High-Low s
1.0
Normalized to: V CE = 10 V, I F = 10 mA, TA = 25C CTRce(sat) VCE = 0.4 V TA = 85C NCTR
Ta = 25C, IF = 10 mA Vcc = 5 V, Vth = 1.5 V tpHL 100 2.0
0.5 NCTR(SAT) 0.0 .1 1 10 IF - LED Current - mA 100
10 tpLH 1 .1 1 10 100 RL - Collector Load Resistor - k
1.5
1.0
iild1_09
iild1_12
Figure 9. Normalized Non-Saturated and Saturated CTR vs. LED Current
Figure 12. Propagation Delay vs. Collector Load Resistor
www.vishay.com 6
Document Number 83646 Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8
ISO Method A
3
2
1
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
Package Dimensions in Inches (mm)
pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16
ISO Method A
.779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56)
i178007
.300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35)
.020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27)
10 typ. 3-9 .008 (.20) .012 (.30)
Document Number 83646 Rev. 1.4, 05-Nov-04
www.vishay.com 7
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18450
www.vishay.com 8
Document Number 83646 Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83646 Rev. 1.4, 05-Nov-04
www.vishay.com 9


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